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| Transistor 2SD662, 2SD662B Silicon NPN epitaxial planer type For high breakdown voltage general amplification Unit: mm 6.90.1 1.5 2.50.1 1.0 1.0 2.40.2 2.00.2 3.50.1 s Features q q q 1.5 R0.9 R0.9 0.85 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD662 2SD662B 2SD662 VCEO VEBO ICP IC PC Tj Tstg Symbol VCBO (Ta=25C) Ratings 250 400 200 400 5 100 70 600 150 -55 ~ +150 Unit 3 0.550.1 1.250.05 0.450.05 2 1 V 2.5 2.5 emitter voltage 2SD662B Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW C C 1:Base 2:Collector 3:Emitter EIAJ:SC-71 M Type Mold Package s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage 2SD662 2SD662B (Ta=25C) Symbol ICEO VCEO VEBO hFE* VCE(sat) fT Cob Conditions VCE = 100V, IB = 0 IC = 100A, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 5mA IC = 50mA, IB = 5mA VCB = 10V, IE = -10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 50 80 5 10 200 400 5 30 30 220 150 1.2 V MHz pF min typ max 2 Unit A V V Emitter to base voltage Forward current transfer ratio 2SD662 2SD662B Collector to emitter saturation voltage Transition frequency Collector output capacitance *h FE Rank classification P 30 ~ 100 Q 60 ~ 150 R 100 ~ 220 hFE Rank 4.10.2 High collector to emitter voltage VCEO. High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.4 1.00.1 R 0. 4.50.1 7 1 Transistor PC -- Ta 800 120 Ta=25C 700 100 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA IB=2.0mA 100 2SD662, 2SD662B IC -- VCE 120 VCE=10V 25C IC -- VBE Collector power dissipation PC (mW) Collector current IC (mA) 600 500 400 300 200 100 0 0 40 80 120 160 200 Collector current IC (mA) Ta=75C 80 -25C 80 60 0.6mA 0.4mA 60 40 0.2mA 20 40 20 0 0 2 4 6 8 10 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) IC -- IB Collector to emitter saturation voltage VCE(sat) (V) 120 VCE=10V Ta=25C 100 100 30 VCE(sat) -- IC IC/IB=10 3.0 IB -- VBE VCE=10V Ta=25C 2.5 Collector current IC (mA) 80 Base current IB (mA) 10 10 3 1 Ta=75C 0.3 0.1 0.03 0.01 0.01 0.03 25C -25C 2.0 60 1.5 40 1.0 20 0.5 0 0 0.4 0.8 1.2 1.6 2.0 0 0.1 0.3 1 3 0 0.2 0.4 0.6 0.8 1.0 Base current IB (mA) Collector current IC (mA) Base to emitter voltage VBE (V) hFE -- IC 360 VCE=10V 160 fT -- I E 104 VCB=10V Ta=25C ICBO -- Ta VCB=250V Forward current transfer ratio hFE 300 Transition frequency fT (MHz) 140 120 100 80 60 40 20 103 240 Ta=75C 180 25C 120 ICBO (Ta) ICBO (Ta=25C) -3 -10 -30 -100 102 -25C 10 60 0 0.01 0.03 0.1 0.3 1 3 10 0 -1 1 0 40 80 120 160 200 Collector current IC (mA) Emitter current IE (mA) Ambient temperature Ta (C) 2 |
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